Quantum Well States in Spin-Dependent Tunnel Structures

Abstract

The magnetotransport behavior of magnetic tunnel junctions with a nonmagnetic interface layer has been studied. The initial effect of the added layer is to reduce the magnetoresistance effect. Also, the bias voltage dependence of the magnetoresistance becomes increasingly more asymmetric. The dependence of the magnetoresistance both on the thickness of the interface layer as well as on the bias voltage can be interpreted as signatures of the development of quantum well states.