Applied Physics Letters · 2012 · 48 citations · 26 references
EngineeringElectrical EngineeringMaterials ScienceOpticsPhotonicsSemiconductor DevicesLaser DiodesLaser PhysicsOptical ResonatorsOptoelectronic DevicesQuantum DotsSemiconductor LasersCurrent InjectionCurrent Injection ConfinementMicroring ResonatorsQuantum Dot Laser DiodesQuantum Dot LasersRing ResonatorsSemiconductor Laser DiodesWhispering-gallery-mode Resonators
We demonstrate room temperature, continuous wave lasing of laser diodes based on AlGaAs whispering gallery mode (WGM) resonators (microcylinder and microring) embedding a quantum dot (QD) active layer. Using InGaAlAs QDs, high-Q (>60 000) lasing modes are observed around 910 nm, up to 50 °C. Lasing with similar performance is obtained around 1230 nm, using InAs QDs. Furthermore, we show that the current injection in the active part of the device is improved in ring resonators, leading to threshold currents of approximately 4 mA for a device with 80 μm diameter. This geometry also suppresses WGMs with a high radial order, thus simplifying the lasing spectra. In these conditions, stable single-mode and two-color lasing can be obtained.
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Recent progress in lasers on silicon
Di Liang, John E. Bowers · Nature Photonics · 2010 · 1.1K citations
Ultralong Dephasing Time in InGaAs Quantum Dots
Paola Borri, W. Langbein, S. Schneider et al. · Physical Review Letters · 2001 · 987 citations · Full text
Exciton-Photon Strong-Coupling Regime for a Single Quantum Dot Embedded in a Microcavity
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Natural Sciences, Physics, Optics +13