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Self-organization of GaN/Al0.18Ga0.82N multi-layer nano-columns on (0 0 0 1) Al2O3 by RF molecular beam epitaxy for fabricating GaN quantum disks

Materials ScienceMaterials EngineeringGan/al0.18ga0.82n Multi-layer Nano-columnsAluminium NitrideEngineeringPhysicsNanotechnologyNanoelectronicsApplied PhysicsAluminum Gallium NitrideGan Power DeviceGallium OxideGan Quantum DisksCategoryiii-v Semiconductor