Sub-Poissonian shot noise of a high internal gain injection photon detector

Abstract

The noise performance of an infrared injection photon detector with very high internal gain was investigated at a wavelength of 1.55 mum. The devices showed sub-Poissonian shot noise with Fano factors around 0.55 at 0.7 V at room temperature. Optical to electrical conversion factors of 3000 electrons per absorbed photon were recorded at 0.7 V. The change in noise-equivalent power with respect to bias voltage was evaluated. The optical to electrical conversion factor and Fano factor were measured under increasing illumination and compared to theoretical expectations.