Publication | Closed Access
Enhancement of the activation energy in coupled CdTe/ZnTe quantum dots and quantum-well structures with a ZnTe thin separation barrier
31
Citations
16
References
2002
Year
Materials ScienceCdte/znte Quantum DotsIi-vi SemiconductorQuantum-well StructuresEngineeringPhotoluminescencePhysicsNanotechnologyNanoelectronicsQuantum DeviceApplied PhysicsQuantum DotsColloidal NanocrystalsActivation EnergyOptoelectronicsTemperature-dependent Photoluminescence MeasurementsCompound SemiconductorSemiconductor Nanostructures
Temperature-dependent photoluminescence measurements showed that the activation energy of CdTe/ZnTe quantum dots (QDs) coupled with a quantum well is much larger than that of the QDs alone, This behavior is attributed to the tunneling of carriers via a thin separation layer from the quantum well to the QDs. The present observations can help improve understanding of the enhancement of the activation energy in coupled CdTe/ZnTe nanostructures.
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