Resistive switching behaviors of NiO films with controlled number of conducting filaments

Abstract

We deposited NiO films by using reactive dc sputtering on Pt/Ti/SiO2/Si substrates. Before depositing top Pt electrodes, conducting filaments are preformed using conductive atomic force microscope. Pt/NiO/Pt capacitor structures with controlled number of conducting filaments show unipolar resistive switching behaviors strongly dependent on the number of conducting filaments. Especially, set switching voltage distribution increases with the number of conducting filament.