MOVPE grown MQW pin diodes for electro-optic modulators and photodiodes with enhanced electron ionisation coefficient

Electric field dependence of optical absorption near the band gap of quantum-well structures

David A. B. Miller, D. S. Chemla, T. C. Damen et al. · Physical review. B, Condensed matter · 1985 · 2K citations

Natural Sciences, Materials Science, Physics +17

High-speed optical modulation with GaAs/GaAlAs quantum wells in a <i>p</i>-<i>i</i>-<i>n</i> diode structure

Thomas H. Wood, C.A. Burrus, David A. B. Miller et al. · Applied Physics Letters · 1984 · 386 citations

Engineering, Electrical Engineering, Materials Science +17

Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio

Federico Capasso, W. T. Tsang, Albert L. Hutchinson et al. · Applied Physics Letters · 1982 · 306 citations

Engineering, Electrical Engineering, Physics +17

Room-temperature laser operation of quantum-well Ga(1−<i>x</i>)Al<i>x</i>As-GaAs laser diodes grown by metalorganic chemical vapor deposition

Russell D. Dupuis, P.D. Dapkus, N. Holonyak et al. · Applied Physics Letters · 1978 · 177 citations

Engineering, Electrical Engineering, Materials Science +17

The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructures

T. F. Kuech, E. Veuhoff, T. S. Kuan et al. · Journal of Crystal Growth · 1986 · 157 citations

Engineering, Materials Engineering, Materials Science +16