Journal de Physique Lettres · 1984 · 18 citations · 6 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsRadiation TransportTransport PhenomenaCharge Carrier TransportElectrical ConductivityRadiation ResistanceRadiation SpectroscopyRadiation Transport In MatterCharge Carrier DensityCharge Carrier DynamicsCharge Transport AnalysisCharge Transport MeasurementsElectrical Transport PropertiesRadiation Transport In SolidsTemperature Dependence Of Electrical PropertiesThermal Radiation Transport
Dynamic resistance, noise spectrum and electron diffraction studies on electron irradiated orthorhombic TaS3 were performed in the temperature range of 75 K-280 K. At low defect concentrations (< 10-4 displacement per Ta atoms) the threshold field of the nonlinear conductivity (ET) increases linearly with the irradiation dose in spite of the fact that there is hardly any effect on the Peierls transition temperature, Tp = 221 K. Concomitantly the sharp peaks in the noise spectrum are smeared out and the broad band noise level increases. At higher defect concentrations, Tp decreases and the transverse coherence of CDWs is lost. In this regime the sharp threshold disappears from the nonlinear characteristics.
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Thermopower of doped and damaged NbSe3
P. M. Chaikin, W. W. Fuller, R.C. Lacoe et al. · Solid State Communications · 1981 · 29 citations
Natural Sciences, Materials Engineering, Materials Science +10
Disorder in the quasi-one-dimensional conductor monoclinic tantalum trisulfide TaS3
G. Mihály, N. Housseau, H. Mutka et al. · Journal de Physique Lettres · 1981 · 25 citations · Full text