Proceedings - IEEE International SOI Conference/Proceedings · 2007 · 20 citations · 3 references
Electrical EngineeringEngineeringRf SemiconductorElectronic EngineeringAntennaMicrowave AntennaLow Insertion LossSmart AntennaHighly-integrated Soi Front-endCostly SapphireComputational ElectromagneticsMicroelectronicsLinearity HeretoforeElectromagnetic Compatibility
A CMOS-compatible SOI SP6T cellular antenna switch achieves linearity heretofore requiring more costly sapphire or GaAs substrate materials. The prototype TX path P-o.ids is 41 dBm and harmonics are 79 dBc at 34 dBm output power. A low insertion loss of 0.8 dB and isolation of 40 dB is obtained at 900 MHz. A CMOS-compatible SOI SP6T cellular antenna switch achieves linearity heretofore requiring more costly sapphire or GaAs substrate materials. The prototype TX path P-o.ids is 41 dBm and harmonics are 79 dBc at 34 dBm output power. A low insertion loss of 0.8 dB and isolation of 40 dB is obtained at 900 MHz.
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The state-of-the-art of silicon-on-sapphire CMOS RF switches
Dylan Kelly, C. Brindle, C. Kemerling et al. · 2005 · 75 citations
Low-power Electronics, Electrical Engineering, Engineering +11