Resonant tunneling of holes in Ga0.51In0.49P/GaAs double-barrier heterostructures

Abstract

We report the observation of resonant tunneling of holes in the GaInP/GaAs system. The tunneling structure consists of two lattice-matched 30-Å-thick Ga0.51In0.49P barriers with a 40-Å GaAs well in between, sandwiched by p-GaAs layers. Three resonances are clearly visible in the current-voltage characteristics with direct evidence of a negative differential resistance at 77 K. Analyzed in terms of tunneling probabilities for light and heavy holes, respectively, calculations show some discrepancy with experiment, suggesting band-mixing effects.