An analytical threshold voltage model of NMOSFETs with hot-carrier induced interface charge effect

Hot-electron-induced MOSFET degradation—Model, monitor, and improvement

Chenming Hu, Simon Tam, Fu-Chieh Hsu et al. · IEEE Transactions on Electron Devices · 1985 · 1.1K citations

Engineering, Electrical Engineering, Physics +17

Threshold voltage model for deep-submicrometer MOSFETs

zhenglin liu, Chenming Hu, Jiawei Huang et al. · IEEE Transactions on Electron Devices · 1993 · 480 citations

Engineering, Electrical Engineering, Electronic Materials +16

The threshold-voltage model of MOSFET devices with localized interface charge

Yuh-Sheng Jean, Ching-Yuan Wu · IEEE Transactions on Electron Devices · 1997 · 76 citations

Engineering, Electrical Engineering, Microelectronics +16

Analysis of MOSFET degradation due to hot-electron stress in terms of interface-state and fixed-charge generation

S.N. Shabde, Anjan Bhattacharyya, Ron S. Kao et al. · Solid-State Electronics · 1988 · 61 citations

Engineering, Computer Engineering, Electrical Engineering +16

A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFETs

Rou-Jun Lee, Jen-Shien Su, Steve S. Chung · IEEE Transactions on Electron Devices · 1996 · 43 citations

Engineering, Electrical Engineering, Microelectronics +16