Effect of layer stacking and p-type doping on the performance of InAs∕InP quantum-dash-in-a-well lasers emitting at 1.55μm

Abstract

The authors report the growth of 6-, 9-, and 12-layer InAs∕InP quantum-dash-in-a-well (DWELL) laser structures using gas source molecular beam epitaxy. Broad area laser performance has been investigated as a function of number of layers. The highest modal gain at 48cm−1 is achieved for an optimized nine-DWELL layer structure. The effect of layer stacking and p-type doping on the characteristic temperature is also reported. Nine-DWELL layer single mode ridge waveguide lasers showed high slope efficiency (0.2W∕A per facet) and output power (Pout=20mW), close to those of conventional quantum well devices.