Electrical and Photovoltaic Properties of n-Type Nanocrystalline-FeSi₂/p-Type Si Heterojunctions Prepared by Facing-Targets Direct-Current Sputtering at Room Temperature

Abstract

Semiconducting nanocrystalline iron disilicide (NC-FeSi2) thin films were deposited on Si(111) substrates by facing-targets direct-current sputtering at room temperature. The electrical and photovoltaic properties of the n-type NC-FeSi2/p-type Si heterojunctions were measured and investigated. We experimentally proved the possibility of employing this combination in photovoltaics. A large leakage current observed in the current–voltage characteristics, which was predominantly due to the heterojunction interface defects, resulted in a low conversion efficiency.