Accelerated domain switching speed in single-crystal LiNbO3 thin films

Abstract

By using ionic implantation and wafer bonding technologies, we peeled off a single-crystal LiNbO3 thin film in the atomic-layer smoothness from the surface of a bulk Z-cut LiNbO3 single crystal. X-ray diffraction patterns showed only (00l) orientation of the film. From positive-up-negative–down pulse characterization, we measured domain switching current transients under various short-pulse voltages, where we observed domain switching currents to occur separately at time after initial capacitor charging currents. This is similar to early observations in bulk ferroelectric single crystals, where apparent positive/negative coercive fields of domain switching determined from polarization-electric field hysteresis loops always equal maximum/minimum applied fields. However, after pulse stressing of the film for more than 1000 cycles, the domain switching speed is accelerated, where domain switching current overlaps with the initial capacitor charging current with a well-defined coercive field independent of the applied-field strength. Finally, we simulated the whole domain switching current transients with the assumption of the resistance degradation across interfacial passive layers between the film and electrodes.