Jun Jiang

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

Jun Jiang, Zi Long Bai, Zhi Hui Chen et al. · Nature Materials · 2017 · 239 citations

Natural Sciences, Materials Engineering, Materials Science +14

Heavily electron-doped electronic structure and isotropic superconducting gap in AxFe2Se2 (A=K,Cs)

Yi-Ling Zhang, Lei Yang, Mingxiang Xu et al. · arXiv (Cornell University) · 2010 · 205 citations · Full text

Natural Sciences, Materials Science, Physics +15

Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers

Anquan Jiang, Wen Ping Geng, Peng Lv et al. · Nature Materials · 2020 · 149 citations

Engineering, Materials Engineering, Materials Science +12

Nonvolatile ferroelectric field-effect transistors

Xiaojie Chai, Jun Jiang, Qinghua Zhang et al. · Nature Communications · 2020 · 140 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +15

Analog ferroelectric domain-wall memories and synaptic devices integrated with Si substrates

Chao Wang, Tianyu Wang, Wendi Zhang et al. · Nano Research · 2021 · 47 citations

Engineering, Electrical Engineering, Materials Science +16