AlGaInAs/InP 1.5 µm MQW DFB laser diodesexceeding 20 GHz bandwidth

Abstract

Buried mushroom multiquantum well DFB laser diodes with compressively strained GaInAs quantum wells and asymmetric confinement layer design are fabricated with a combined MBE/MOCVD technology. Packaged devices exhibit high –3 dB IM bandwidths for very low bias levels and a record bandwidth for this material system of 21 GHz.