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Microstructure and Electro‐Optical Properties of Evaporated Indium‐Oxide Films
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1983
Year
Materials ScienceOptical MaterialsEngineeringElectronic MaterialsIndium AtomsEvaporated Indium‐oxide FilmsOxide ElectronicsOptoelectronic MaterialsApplied PhysicsSemiconductor MaterialOptoelectronic DevicesThin Film Process TechnologyIndium‐oxide FilmsThin FilmsHall EffectThin Film Processing
The microstructures and electro‐optical properties of thermally evaporated indium‐oxide films are given and discussed. It is shown that highly transparent and conducting films can be prepared at relatively low (∼150°C) substrate temperatures, with and without doping by tin. Results of stoichiometry measurements in conjunction with the Hall effect and crystal structure data suggest the existence of indium atoms with different valences in these films. This implies that the conduction mechanism in this material may be more complicated than hitherto assumed.