Measurement of Piezoelectric Displacements of Pb(Zr, Ti)O₃ Thin Films Using a Double-Beam Interferometer

Abstract

The double-beam interferometric method is applied to measure the field-induced displacement of Pb(Zr, Ti)O 3 thin films. The dc electric field dependence of the longitudinal piezoelectric coefficient ( d 33 ) response of Pb(Zr, Ti)O 3 thin films deposited by metal organic chemical vapor deposition (MOCVD) was measured. Experimental d 33 values were compared with coefficients calculated using a phenomenological approach and bulk parameters. Qualitative agreement was obtained between measured and calculated coefficients.