Silicon Deposition on a Rotating Disk

Abstract

A one‐dimensional model has been developed which describes the interactions among hydrodynamics, multicomponent heat and mass transfer, and reaction kinetics for the rotating disk system. The analysis includes variable physical properties and finite interfacial velocity and has provision for an arbitrary number of simultaneous homogeneous and heterogeneous reactions. The model has been applied to the chemical vapor deposition of silicon from silicon tetrachloride in excess hydrogen. Predictions for the dependence of silicon production rate on disk temperature and rotation rate are compared with available experimental data.