Analysis of Local Lattice Strains Around Plate-Like Oxygen Precipitates in Czochralski-Silicon Wafers by Convergent-Beam Electron Diffraction

Abstract

Convergent-beam electron diffraction (CBED) is used to study lattice strain around plate-like oxygen precipitates in Czochralski (CZ)-grown silicon. Local lattice strain determined from higher-order Laue zone (HOLZ) patterns shows that compressive and tensile stress fields exist near the precipitates. The spatial variation of local lattice strain and lattice rotation is visualized in a defocused large angle CBED disc, or a convergent-beam imaging (CBIM) disc.