Publication | Closed Access

A study of threshold voltage fluctuations of nanoscale double gate metal-oxide-semiconductor field effect transistors using quantum correction simulation

Device ModelingElectrical EngineeringEngineeringPhysicsNanoelectronicsBias Temperature InstabilityApplied PhysicsThreshold Voltage FluctuationsQuantum Correction SimulationMicroelectronicsBeyond CmosSemiconductor Device