Journal of The Electrochemical Society · 1982 · 13 citations · 0 references
Natural SciencesChemistryMaterials ScienceElectrochemistrySemiconductor MaterialsThin FilmsElectrode MaterialsPhotoelectrochemical MaterialsPhotoelectrochemistrySemiconductor InterfacesSemiconductor SurfacesSemiconductor Thin FilmsDark CurrentMetal Oxide PhotoelectrodesNanostructured PhotoelectrodesPhotoelectrochemical CellsSchottky Barrier ContactsSemiconductor HeterojunctionsSemiconductor PhotoelectrodesSemiconductor Working Electrodes
The photoelectrochemical behavior of sputtered overlayers on electrodes has been investigated. Flatband potential and photocurrent onset potential are shifted to values positive of the reversible hydrogen potential. Various dark current‐potential characteristics depending on film preparation and starting potential have been obtained. The results are explained by assuming that a Schottky barrier is formed at the interface.