Visible-Light Emission Properties of Erbium-Doped Tantalum-Oxide Films Produced by Co-Sputtering

Abstract

The visible-light emission properties of erbium (Er)-doped tantalum-oxide films prepared by co-sputtering were evaluated. Photoluminescence (PL) peaks at wavelengths of 550 and 670 nm could be observed from these films by ultraviolet-laser excitation after annealing. The dependence of Er 3+ concentration, annealing temperature, and annealing time on the PL peak intensities were investigated. Such light-emitting sputtered films can be useful as high-index materials of photonic crystals that can be applied to novel active devices.