Applied Physics Letters · 1970 · 41 citations · 4 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsMetal-semiconductor ContactsOptical Properties Of SemiconductorsSemiconductor LasersSemiconductor PhysicsSemiconductor SurfacesSurface PhysicsBarriersLaser ThresholdSubstitutional DopingThreshold Behavior
Laser emission is obtained from forward biased evaporated metal barriers on degenerate p-PbTe and p-Pb0.8Sn0.2Te at T=4.2°K. Metals with small work functions such as In, Pb, and Zn produce a degenerate inverted n-type surface region on p-type samples without chemical doping. Low-threshold laser emission has been obtained from these barriers on p-PbTe at λ = 6.4μ and from Pb barriers on p-Pb0.8Sn0.2Te at λ = 15μ.
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