LASER EMISSION FROM METAL-SEMICONDUCTOR BARRIERS ON PbTe AND Pb0.8Sn0.2Te

Abstract

Laser emission is obtained from forward biased evaporated metal barriers on degenerate p-PbTe and p-Pb0.8Sn0.2Te at T=4.2°K. Metals with small work functions such as In, Pb, and Zn produce a degenerate inverted n-type surface region on p-type samples without chemical doping. Low-threshold laser emission has been obtained from these barriers on p-PbTe at λ = 6.4μ and from Pb barriers on p-Pb0.8Sn0.2Te at λ = 15μ.