Japanese Journal of Applied Physics · 2000 · 56 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsWide-bandgap SemiconductorsElectrical PropertiesElectrical Properties AnalysisGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Crystal GrowthMolecular Beam EpitaxyNitride Thin FilmsPolarity Dependence
GaN heteroepitaxial growth on sapphire (0001) substrates was carried out by radio-frequency plasma-assisted molecular beam epitaxy (rf-MBE). A Ga-polarity growth was achieved by using an AlN high-temperature buffer layer. The epilayer polarity was characterized directly by coaxial impact collision ion scattering spectra (CAICISS). It was found that the properties of the GaN films showing Ga-face polarity, including their structural and electrical properties, were dramatically improved compared to those of films with N-face polarity. This important conclusion is considered to be a breakthrough in the realization of high-quality III-nitride films by MBE for device applications.
10
Improved quality GaN grown by molecular beam epitaxy using In as a surfactant
F. Widmann, B. Daudin, G. Feuillet et al. · Applied Physics Letters · 1998 · 159 citations