Japanese Journal of Applied Physics · 1993 · 10 citations · 0 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsCrystal ChemistryCrystal GrowthCrystallization ProcessesSemiconductor Crystal GrowthSemiconductor PhysicsWide Band Gap SemiconductorsCrystal Growth ThermodynamicsDirect Band GapGrowth ExperimentsHigh-pressure Crystal GrowthOptical AbsorptionPrimary Constituent ElementsSemiconductor CharacterizationStability Curve Analysis
InN is a wide direct gap semiconductor, which has not been yet grown in the form of large single crystals. In this work, we report the first synthesis and crystallization of InN from its constituent elements. We have also calculated p-T stability curve for this compound, up to 20 kbar, using low pressure decomposition data 1) and equation of state of N 2 2) . We verified this curve by crystal growth experiments as well as by DTA measurements of decomposition of InN powder at high N 2 pressure up to 14 kbar. InN crystals are characterized by SEM and optical absorption.