Strain Compensation in Silicon by Diffused Impurities

Abstract

A method to avoid dislocation generation in boron or phosphorus‐diffused layers is presented. This method, called strain compensation, considerably reduces dislocation generation in the diffused layers. This strain compensation is brought about because impurities such as tin and boron, or tin and phosphorus, have been diffused simultaneously into the silicon, with tin counteracting the stresses produced by the solute lattice contraction of the boron or the phosphorus. Transmission electron micrographs are provided as evidence of this phenomenon.