Side-gate graphene field-effect transistors with high transconductance

Abstract

We have fabricated epitaxial side-gate graphene field-effect transistors (FETs) with high transconductance. A side-gate graphene FET with 55 × 60 nm2 active channel dimensions and a lateral gate-channel separation of 95 nm showing a high transconductance of 590 mS/mm is presented. An estimation of the electrostatic gate-channel capacitance of epitaxial side-gate graphene FETs shows that it is in the same order as the electrostatic gate capacitance of common top-gate graphene MOSFETs justifying the high transconductances of our devices. The results of the present paper demonstrate the potential of the side-gate architecture for graphene transistors.