Radiation-induced charge trapping in implanted buried oxides

Abstract

We investigate the response of buried oxide layers formed by oxygen implantation to total dose x-ray irradiation. The characterization is based on C-V measurements of the buried oxide capacitor and on back-channel transistor measurements. Reduced charge trapping is found for material implanted with a lower oxygen dose, annealed at higher temperatures, and annealed for longer times. Also, total-dose irradiation was found to generate few interface traps. A particularly interesting result is that an increase in the concentration of shallow donors with x-ray dose was observed for certain samples. This increase in the donor concentration was observed only in the top Si film.