Langmuir−Blodgett Film Deposition of Metallic Nanoparticles and Their Application to Electronic Memory Structures

Abstract

The Langmuir−Blodgett deposition of organically passivated gold nanoparticles is reported. A monolayer of these particles has been incorporated into a metal−insulator−semiconductor (MIS) structure. The MIS device exhibits a hysteresis in its capacitance versus voltage characteristic, the magnitude of which is dependent on the voltage sweep conditions. Charge storage in the layer of nanoparticles is thought to be responsible for this effect.