IEEE Transactions on Electron Devices · 1992 · 45 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film TransistorsCircuit ConfigurationInversion Layer FormationP-n Junction CharacteristicsPolycrystalline SiliconPolycrystalline Silicon Thin-film TransistorsThreshold VoltageThreshold Voltage Extraction
The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) with a field-induction-drain (FID) structure using an inversion layer as a drain are investigated. The FID structure not only reduces the anomalous leakage current, but also maintains a high on current. An off current of 1.5 pA/ mu m and an on/off current ratio of 10/sup 7/ (V/sub d/=10, V/sub g/=-20 V) are successfully obtained. These characteristics result from good junction characteristics between the p channel and n/sup +/ inversion layer. Reducing the threshold voltage of the FID region allows a simple circuit configuration for the FID TFTs.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Anomalous leakage current in LPCVD PolySilicon MOSFET's
J.G. Fossum, A. Ortíz-Conde, H. Shichijo et al. · IEEE Transactions on Electron Devices · 1985 · 298 citations
A simpler 100-V polysilicon TFT with improved turn-on characteristics
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