All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature

Abstract

A transparent resistance random access memory (RRAM) structure consisted of all-ZnO-based film is fabricated by the pulsed laser deposition method at room temperature. The device is based on transparent Mg-doped ZnO films, sandwiched by Al-doped ZnO as electrodes. Reliable and reproducible bipolar resistance memory switching performances are achieved. Fast and stable switching behaviour in the voltage pulse mode is demonstrated with set and reset durations of 50 ns and 100 ns, respectively. The transmittance of the device is from 64% to 82% in the visible region. All-ZnO-based transparent RRAM will open a route towards see-through memory devices.