Electronic Spin of the Ga Vacancy in GaP

Abstract

EPR experiments with uniaxial stress on the Ga vacancy ${V}_{\mathrm{Ga}}$ in GaP reveal that its spin is $\frac{3}{2}$. The spectrum splits linearly with stress into three components with a coefficient ${C}_{11}=34\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}13}$ ${\mathrm{cm}}^{\ensuremath{-}1}$ ${(\mathrm{d}\mathrm{y}\mathrm{n}/{\mathrm{cm}}^{2})}^{\ensuremath{-}1}$ at 20 K. The high spin demonstrates the importance of the exchange interaction for this vacancy.