Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane

Abstract

Temperature dependence of the growth rate of 3C-SiC films on Si(001) during ultralow-pressure chemical vapor deposition (ULP-CVD) using monomethylsilane is reported. At low temperatures the growth rate is high and thermally activated, but a drastic drop of the growth rate occurs at a critical temperature T c . Another characteristic temperature T * (≤ T c ) separates single-crystalline and polycrystalline SiC(001)/Si growth. With a two-step growth procedure, consisting of a high temperature nucleation of a seeding 3C-SiC(001) layer followed by a low-temperature deposition, we have realized a high-rate (∼3 µm/h) growth of a single-crystalline 3C-SiC(001) film.