Oxygen precipitation in antimony-doped silicon wafers

Abstract

Measurements of oxygen concentration as well as preferential etching of lightly and medium Sb-doped wafers show that for high-temperature (1050 °C) anneals the oxygen precipitation is inversely dependent on the dopant concentration, while it is independent of the dopant concentration for low-temperature (650 °C) anneals. This is interpreted on the basis of a heterogeneous versus homogeneous precipitation mechanism.