Applied Physics Letters · 1968 · 30 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceOpticsOptoelectronicsPhotonicsDetector TechnologyOptoelectronic MaterialsWide Band Gap SemiconductorsGainLight LevelsLow-band-gap SemiconductorsPhotomultiplier DetectorsPhotomultiplier TubesSecondary Electron Emission
A new photomultiplier is described in which the recently reported GaP(Cs) material is used for the first dynode to obtain high secondary emission gain. Gain factors of 20 to 40 have been measured resulting in greatly improved performance of the new photomultiplier at very low light levels.
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R. E. Simon, B. F. Williams · IEEE Transactions on Nuclear Science · 1968 · 256 citations