Effects of nitrogen doping and illumination on lattice constants and conductivity behavior of zinc oxide grown by magnetron sputtering

Abstract

A yellow-orange nitrogen-doped zinc oxide (ZnO:N) film was deposited on a quartz glass substrate at 510K by reactive radio-frequency magnetron sputtering of a ZnO target with sputtering gas of nitrogen. The lattice constants of the as-grown ZnO:N are much larger than those of undoped ZnO, and decrease with increasing annealing temperature due to escape of the nitrogen from the ZnO:N and decrease of tensile stress, accompanied with color change from yellow-orange to pale yellow. The nitrogen occupies two chemical environments in the ZnO:N based on x-ray photoelectron spectroscopy measurement. One is NO acceptor formed by substitution of N atom for O sublattice, and another is (N2)O double donors produced by substitution of N molecular for O site, which make the lattice constants expanded. The as-grown ZnO:N film shows insulating, but behaves p-type conduction in the dark after annealed at 863K for 1h under 10−3Pa. Unfortunately, the p-type conduction is not stable and reverts to n type soon. However, after illuminated by sunlight for several minutes, the n-type ZnO:N transforms into p type again. The mechanism of the transformation of the conductivity behavior is discussed in the present work.