Incorporation of oxygen into nanocrystalline silicon

Abstract

The incorporation of oxygen into nanocrystalline (“microcrystalline”) silicon is studied by means of infra-red absorption spectroscopy and gravimetry. Callibration data are reported which allow to correlate the absorption coefficient in i.r. spectra due to the SiO stretching vibration with the absolute concentration of the SiO groups. The nature of the oxygen bonding and saturation of its total content in the films are discussed.