IEEE Transactions on Terahertz Science and Technology · 2012 · 35 citations · 19 references
EngineeringElectrical EngineeringAntennasMicroelectronicsSemiconductor DevicesCmos Circuit DesignHigh-frequency Semiconductor DevicesOscillatorsRadio-frequency Integrated CircuitsTerahertz PhotonicsTerahertz SpectroscopyCutoff FrequencyHarmonicsMichelson InterferometerOscillator CircuitsTerahertz GenerationTerahertz OscillatorsTerahertz SourcesTerahertz Waves
This paper reports a CMOS terahertz oscillator with a novel frequency selective negative resistance (FSNR) tank to boost its operating frequency. The demonstrated oscillator can operate at a fundamental frequency of about 0.22 THz, exceeding the CMOS device cutoff frequency of f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> . The proposed architecture suppresses undesired 2nd and odd harmonics and boosts the fourth-order harmonic (0.87 THz), which radiates through an on-chip patch antenna. The THz oscillator's output spectrum is profiled by using a Michelson interferometer. The oscillator circuit consumes 12 mA from a 1.4 V supply and occupies a 0.045 mm2 die area in a 65 nm CMOS technology.
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Cutting-edge terahertz technology
Masayoshi Tonouchi · Nature Photonics · 2007 · 6.2K citations
Photomixing up to 3.8 THz in low-temperature-grown GaAs
E. R. Brown, K. A. McIntosh, K. B. Nichols et al. · Applied Physics Letters · 1995 · 487 citations