MBE growth of GaAs p-n junction LEDs on (111)A GaAs substrates using only silicon dopant - Concepedia

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MBE growth of GaAs p-n junction LEDs on (111)A GaAs substrates using only silicon dopant

13

Citations

8

References

1993

Year

Kazuhisa Fujita, Akinori Shinoda, Makoto Inai, T. Yamamoto, M. Fujii, David Lovell, T. Takebe, K. Kobayashi

Journal of Crystal Growth

Electrical EngineeringSemiconductor DeviceEngineeringMbe GrowthApplied PhysicsSemiconductor Device FabricationOptoelectronicsCompound SemiconductorSilicon Dopant

References

	Year	Citations

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