K. Kobayashi - Concepedia

Author

K. Kobayashi

The University of Osaka

Also Known As

K. KOBAYASHI, K. Kobayashi

Publications

385

Citations

H-Index

Concepts

All Affiliations

The University of Osaka Advanced Telecommunications Research Institute International

About

K. Kobayashi is an author at The University of Osaka specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	296
2	Applied Physics	9	9	296
3	Electrical Engineering	5	5	147
4	Chemical Engineering	1	1	33
5	Chemistry	1	1	108

K. Kobayashi

Publications

317

Citations

H-Index

Page 1

	Year	Citations
Structural characteristics of GeTe-rich GeTe–Sb2Te3 pseudobinary metastable crystals Toshiyuki Matsunaga, Hiroshi Morita, R. Kojima, Journal of Applied Physics Materials ScienceCrystal StructureStructural CharacteristicsEngineeringCrystalline Defects	2008	108
Si doping and MBE growth of GaAs on tilted (111)A substrates Mitsuhiro Shigeta, Yoshimichi Okano, H. Seto, Journal of Crystal Growth Electrical EngineeringEngineeringSi DopingMbe GrowthApplied Physics	1991	56
Lateral p-n junctions on GaAs(111)A substrates patterned with equilateral triangles M. Fujii, T. Yamamoto, Mitsuhiro Shigeta, Surface Science Electrical EngineeringEngineeringPhysicsNanoelectronicsApplied Physics	1992	33
Fundamental Selective Etching Characteristics of HF + H 2 O 2 + H 2 O Mixtures for GaAs T. Takebe, T. Yamamoto, M. Fujii, Journal of The Electrochemical Society EngineeringRound Intersection CornerChemical EngineeringRf SemiconductorMixture Composition	1993	33
Study of facet generation during MBE of GaAs on (111)A substrates patterned with ridge-type triangles T. Takebe, M. Fujii, T. Yamamoto, Journal of Crystal Growth EngineeringPhysicsApplied PhysicsSemiconductor Device FabricationOptoelectronics	1993	18
MBE growth of GaAs p-n junction LEDs on (111)A GaAs substrates using only silicon dopant Kazuhisa Fujita, Akinori Shinoda, Makoto Inai, Journal of Crystal Growth Electrical EngineeringSemiconductor DeviceEngineeringMbe GrowthApplied Physics	1993	13
Electronic transport behavior of off-stoichiometric La and Nb doped SrxTiyO3−δ epitaxial thin films and donor doped single-crystalline SrTiO3 J. D. Baniecki, Masatoshi Ishii, Hiroyuki Aso, Applied Physics Letters Srxtiyo3−δ FilmsEngineeringElectronic Transport BehaviorSolid-state ChemistrySto Single Crystals	2011	12
Lateral variation of indium content in InGaAs grown on GaAs channeled substrates by molecular beam epitaxy Akio Wakejima, A. Inoue, T. Kitada, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceSemiconductorsElectrical EngineeringPeculiar MigrationEngineering	1994	12
Periodic lateral structure of Al content modulations in AlGaAs grown on vicinal (111)A GaAs by molecular beam epitaxy T. Yamamoto, Makoto Inai, T. Takebe, Journal of Crystal Growth EngineeringApplied PhysicsAluminum Gallium NitridePeriodic Lateral StructureAl Content Modulations	1993	11
Light-emitting diode of ZnTeCdS heterojunctions T. Ota, K. Kobayashi, Kiyoshi Takahashi Solid-State Electronics	1972	11

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