Nanotechnology · 2010 · 11 citations · 14 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSolid State PhysicsSurface ScienceElectron MicroscopySemiconductor PhysicsSemiconductor SurfacesSurface PhysicsTwo-dimensional SemiconductorsWide-bandgap SemiconductorsDislocation PhysicsGallium NitrideGallium Nitride (Gan) Materials
We report the direct imaging of standing waves on a GaN(0001)-pseudo (1 × 1) metallic surface, which consists of two atomic Ga layers with the top layer incommensurate. Two types of periodic oscillation are observed by scanning tunneling microscopy at room temperature. The longer wavelength standing waves are due to electron scattering by dislocation-induced steps and two-dimensional InN islands. The localized shorter wavelength waves are attributed to a structural transition of the incommensurate Ga bilayer to a tetrahedral Ga bilayer after the growth of the InN islands.
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Topological surface states protected from backscattering by chiral spin texture
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Experimental Demonstration of Topological Surface States Protected by Time-Reversal Symmetry
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