A high‐efficiency inverse class‐F power amplifier using GaN HEMT

Abstract

Abstract The design and fabrication of a high‐efficiency inverse class‐F power amplifier using a 10‐W gallium nitride (GaN) high‐electron mobility transistor at 1 GHz is presented. The output load network has been used to control harmonic components for high‐efficiency operation. The measurement results show that power‐added efficiency of 74.2%, drain efficiency of 77.5%, and gain of 13.7 dB at an output power of 39.8 dBm for a continuous wave signal. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2420–2422, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23678