The multi-spacer patterning technique: a non-lithographic technique for terascale integration

Abstract

Since the pioneering paper of Aviram and Ratner it has become progressively clearer and clearer that molecules can perform electrical functions so sophisticated as to mimic the behavior of electronic devices, hence the idea of exploiting them for molecular electronics. The practical exploitation of the electronic properties of molecules for computing (i.e., the transformation of a collection of molecules into a device) is, however, a major problem not yet solved. In the last few years the expertise in molecular design and synthesis combined with (i) the identification of a new structure, the crossbar, able to replace those based on a planar arrangement of field effect transistors, and (ii) the development of sub-lithographic techniques for the definition of a random or ordered planar arrangement of nanometre-sized features, has nonetheless led to consider as realistic the hypothesis that molecular devices might replace silicon-based devices when the basic element of the integrated circuit, the metal-oxide-semiconductor field effect transistor, will no longer admit further shrinking. This work is addressed to identify in which ways features (i) and (ii) can be exploited for application in molecular electronics.