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Signature of a back contact barrier in DLTS spectra
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Citations
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References
2011
Year
Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringPhysicsDlts SignalNatural SciencesSpectroscopyElectronic EngineeringApplied PhysicsAbsorption SpectroscopyBack Contact BarrierModel CircuitsQuantum ChemistryMicroelectronicsSpectroscopic PropertyElectromagnetic CompatibilityElectronic Circuit
The DLTS signal induced by a back contact barrier is studied both theoretically and through experiments on model circuits. A nonideal back contact is modeled either by a resistor and a capacitor, or by a germanium diode inversely polarized with respect to the junction diode. Depending on the back contact properties, this may result in a positive or negative capacitance transient. For these model circuits the capacitance transient time constants and amplitudes are studied as a function of voltage pulse height and compared with signals originating from emission and slow capture from a defect level. These two origins of DLTS signals present very different properties, which opens possibilities to distinguish between them.
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