Temperature dependence of electrical conductivity and hall effect of Ga₂Se₃ single crystal

Abstract

Abstract Electrical conductivity (σ) and Hall coefficient ( R H ) of single crystal grown from the melt have been investigated over the temperature range from 398 K to 673 K. Our investigation showed that our samples are p‐type conducting. The dependence of Hall mobility an charge carrier concentration on temperature were presented graphically. The forbidden energy gap was calculated and found to be 1.79 eV. The ionization energy of impurity level equals 0.32 eV approximately. At 398 K the mobility equals to 8670 cm 2 V −1 s −1 and could described by the law μ = aT n ( n = 1.6) in the low temperature range. In the high temperature range, adopting the law μ = bT – m (as m = 1.67), the mobility decreases. This result indicates that in the low temperature range the dominant effect is scattering by ionized impurity atoms, whereas in the high temperature range the major role is played by electron scattering on lattice vibrations (phonons). At 398 K the concentration of free carriers showed a value of about 1.98 × 10 7 cm −3 .