Morphological and compositional changes in the SiO2∕SiC interface region induced by oxide thermal growth

Abstract

Changes in morphology and composition of interfacial regions of thermally grown SiO2 films on SiC in dry O2 induced by reoxidations were investigated using atomic force microscopy and oxygen profiling. The gradual oxygen profile near the interface in oxides grown at 1100°C evidences a transition region between SiO2 and SiC. Reoxidation at 950°C leads to a decrease of the transition region thickness, while reoxidation at 1100°C increases the transition region thickness. These results are discussed in terms of the role played by the reoxidation temperature on the formation and consumption of carbon compounds in the SiO2∕SiC interface region.