Electrochemical growth and resistive switching of flat-surfaced and (111)-oriented Cu2O films

Abstract

Flat-surfaced and fully (111)-oriented Cu2O films were grown through a chelate-assisted electrochemical approach. Based on key roles of chelating agent, the flat surface of films controlled over the columnar-grained growth was obtainable with a root-mean-square roughness value below 3 nm. Cu2O films treated by a rapid-thermal-annealing process at 200 °C exhibited unipolar switching I-V characteristics, presenting the bistable resistance states with a high resistance ratio (Roff/Ron) over 3 orders of magnitude and considerably stable switching properties within 100 switching cycles.