Single-Electron Tunneling Devices Based on Silicon Quantum Dots Fabricated by Plasma Process

Abstract

A study of the electrical properties of multiple tunnel junctions (MTJs) formed in a quasi one-dimensional array of randomly deposited silicon nanocrystals is presented. Nanocrystals are deposited by very-high-frequency (VHF) plasma decomposition of silane. The average dot diameter is 8 nm. The source-drain electrode separation is 30 nm. A gate electrode is employed so that the charge states in quantum dots can be controlled. A study of the source-drain current–voltage ( I – V ) characteristics with various gate voltages is performed. Coulomb blockade, a Coulomb staircase and Coulomb oscillations are observed at temperatures ranging from 40 K to 150 K. Single electron trapping is observed at 40 K.