Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO2 as a gate dielectric - Concepedia

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Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO2 as a gate dielectric

19

Citations

25

References

2010

Year

Y. C. Chang, Wen-Hsin Chang, Yu‐Han Chang, J. Kwo, Y. S. Lin, Shawn S. H. Hsu, J. M. Hong, Chieh‐Chih Tsai, M. Hong

Microelectronic Engineering

Electrical EngineeringEngineeringApplied PhysicsGan MosfetsGan Power DeviceGate DielectricDrain Current EnhancementSemiconductor Device

References

	Year	Citations

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